参数项参数值
参数项参数值
Forward Transconductance - Min5.3 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.5 ns
Rds On - Drain-Source Resistance170 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time21 ns
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge31 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 40 C
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time9.5 ns
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageInfineon / IR IRLR9343TRPBF
TARIC8541290000
RoHS Details
Unit Weight0.139332 oz
Factory Pack Quantity2000
Product TypeMOSFET
Pd - Power Dissipation79 W
BrandInfineon / IR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage55 V
USHTS8541290095
Number of Channels1 Channel
Rise Time24 ns
TypeDigital Audio MOSFET
Moisture Sensitivity Level1 (Unlimited)