参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 4 V
TechnologySi
Id - Continuous Drain Current13 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance295 mOhms
Transistor Type1 P-Channel
Width6.22 mm
Height2.3 mm
Length6.5 mm
Qg - Gate Charge66 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
PackagingMouseReel
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRFR6215TRLPBF
Product CategoryMOSFET
Unit Weight0.070548 oz
Factory Pack Quantity3000
SubcategoryMOSFETs
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation110 W
DescriptionMOSFET MOSFT PCh -150V 13A 580mOhm 44nC
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)