参数项参数值
参数项参数值
Forward Transconductance - Min3.6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current13 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance580 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time53 ns
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge66 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time37 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRFR6215TRPBF
TARIC8541290000
RoHS Details
Unit Weight0.070548 oz
Factory Pack Quantity2000
Product TypeMOSFET
Pd - Power Dissipation110 W
BrandInfineon / IR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET 1 P-CH -150V HEXFET 580mOhms 44nC
Vds - Drain-Source Breakdown Voltage150 V
USHTS8541290095
Number of Channels1 Channel
Rise Time36 ns
TypePreliminary
Moisture Sensitivity Level1 (Unlimited)