参数项参数值
参数项参数值
DC Current Gain hFE Max160
Gain Bandwidth Product fT30 MHz
Collector- Base Voltage VCBO230 V
Maximum DC Collector Current15 A
Collector- Emitter Voltage VCEO Max230 V
Continuous Collector Current15 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.4 V
MXHTS85412999
DC Collector/Base Gain hfe Min55
KRHTS8541299000
CNHTS8541290000
Package / CaseTO-3P-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
TARIC8541290000
PackagingTube
BrandToshiba
Series2SC
RoHS Details
ImageToshiba 2SC5200N(S1,E,S)
Unit Weight0.245577 oz
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity25
ManufacturerToshiba
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 W
USHTS8541290095
DescriptionBipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ
Moisture Sensitivity LevelNot Applicable