参数项参数值
参数项参数值
tariffCode85412900
Power Dissipation P Channel2W
rohsCompliantYES
Power Dissipation N Channel-
hazardousfalse
rohsPhthalatesCompliantYES
Transistor Case StyleSO-8
No. of Pins8Pins
usEccnEAR99
Drain Source On State Resistance P Channel0.017ohm
Drain Source On State Resistance N Channel-
Product RangeHEXFET Series
euEccnNLR
Channel TypeDual P Channel
Qualification-
productTraceabilityNo
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel8A
Operating Temperature Max150°C
Drain Source Voltage Vds N Channel-
SVHCNo SVHC (14-Jun-2023)