参数项参数值
参数项参数值
Forward Transconductance - Min80 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current115 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance7.5 Ohms
Transistor Type1 N-Channel Small Signal MOSFET
Typical Turn-Off Delay Time40 ns
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
CNHTS8541210000
Development KitNCP1095GEVB, NCP1096GEVB
BrandON Semiconductor
ManufacturerON Semiconductor
Series2N7002L
Factory Pack Quantity3500
TARIC8541290000
Channel ModeEnhancement
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET NFET SOT23 60V 115MA 7.5O
Product TypeMOSFET
ImageON Semiconductor 2N7002LT7G
SubcategoryMOSFETs
Unit Weight0.000287 oz
USHTS8541290095
Pd - Power Dissipation300 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)