参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current11 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 16 V, + 16 V
Width6.22 mm
Height2.3 mm
Rds On - Drain-Source Resistance265 mOhms
Transistor Type1 N-Channel
Length6.5 mm
Qg - Gate Charge20 nC
Package / CaseTO-252-3
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageInfineon / IR IRLR120NTRLPBF
Channel ModeEnhancement
SubcategoryMOSFETs
BrandInfineon / IR
Factory Pack Quantity3000
Unit Weight0.139332 oz
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
ManufacturerInfineon
Pd - Power Dissipation48 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel