参数项参数值
参数项参数值
PackagingCut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C180mA (Ta), 290mA (Tc)
Rds On (Max) @ Id, Vgs5.5Ohm @ 180mA, 10V
FET Feature-
Power Dissipation (Max)400mW (Ta), 960mW (Tc)
Vgs(th) (Max) @ Id2V @ 11µA
Supplier Device PackagePG-SOT23-3-U03
Grade-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs780 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds23 pF @ 30 V
Qualification-
Moisture Sensitivity Level2 (1 Year)