参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO80 V
Collector- Emitter Voltage VCEO Max65 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage0.6 V
MXHTS85412101
KRHTS8541219000
Package / CaseSC-70-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
Unit Weight0.000988 oz
Pd - Power Dissipation150 mW
SeriesSBC846
BrandON Semiconductor
ImageON Semiconductor SBC846BWT1G
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
USHTS8541210075
DescriptionBipolar Transistors - BJT SS GP XSTR NPN 65V
Moisture Sensitivity Level1 (Unlimited)