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IRFB9N60APBF
厂牌：威世(VISHAY)
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045767456
描述：Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-220AB
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min5.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current9.2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time13 ns
Rds On - Drain-Source Resistance750 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
Width4.7 mm
MXHTS85412999
Height15.49 mm
Length10.41 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time22 ns
TARIC8541290000
PackagingTube
BrandVishay Semiconductors
SeriesIRFB
RoHS Details
ImageVishay Semiconductors IRFB9N60APBF
Product CategoryMOSFET
Unit Weight0.211644 oz
SubcategoryMOSFETs
ManufacturerVishay
Factory Pack Quantity50
Product TypeMOSFET
Pd - Power Dissipation170 W
USHTS8541290095
DescriptionMOSFET 600V N-CH HEXFET
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time25 ns
Moisture Sensitivity Level1 (Unlimited)