参数项参数值
参数项参数值
DC Current Gain hFE Max800 at - 2 mA, - 5 V
Gain Bandwidth Product fT200 MHz
ConfigurationSingle
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 100 mA
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Minimum Operating Temperature- 65 C
ImageDiodes Incorporated BC857CQ-7-F
QualificationAEC-Q101
DescriptionBipolar Transistors - BJT General Purpose Transistor SOT23 T&R 3K
Package / CaseSOT-23-3
DC Collector/Base Gain hfe Min420 at - 2 mA, - 5 V
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Mounting StyleSMD/SMT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
TARIC8541210000
SubcategoryTransistors
USHTS8541210095
Pd - Power Dissipation310 mW
Moisture Sensitivity Level1 (Unlimited)