参数项参数值
参数项参数值
DC Current Gain hFE Max800
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 0.9 V
DC Collector/Base Gain hfe Min420
MXHTS85412999
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageON Semiconductor NSVBC857CWT1G
PackagingReel
PackagingMouseReel
PackagingCut Tape
SubcategoryTransistors
BrandON Semiconductor
ManufacturerON Semiconductor
Unit Weight0.000176 oz
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
USHTS8541210075
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT SS SC70 GP XSTR PNP 45V
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)