参数项参数值
参数项参数值
DC Current Gain hFE Max800 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
ConfigurationSingle
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Minimum Operating Temperature- 65 C
ImageCentral Semiconductor BC857C TR PBFREE
Product CategoryBipolar Transistors - BJT
Collector-Emitter Saturation Voltage0.65 V
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
DC Collector/Base Gain hfe Min420 at 2 mA, 5 V
PackagingReel
DescriptionBipolar Transistors - BJT PNP 50Vcbo 45Vceo 5.0Vebo 100mA 350mW
Mounting StyleSMD/SMT
TARIC8541210000
BrandCentral Semiconductor
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
ManufacturerCentral Semiconductor
RoHS Details
SeriesBC857
SubcategoryTransistors
USHTS8541210075
Pd - Power Dissipation350 mW