参数项参数值
参数项参数值
DC Current Gain hFE Max420 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 100 mA
Collector- Emitter Voltage VCEO Max- 45 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 700 mV
DC Collector/Base Gain hfe Min420 at 2 mA, 5 V
Width1.3 mm
Height0.94 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000282 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation300 mW
SeriesBC857CL
BrandON Semiconductor
Factory Pack Quantity10000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerON Semiconductor
USHTS8541210095
DescriptionBipolar Transistors - BJT 45V 100mA PNP SILCON
Moisture Sensitivity Level1 (Unlimited)