参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO4 V
Collector-Emitter Saturation Voltage- 0.25 V
Width1.24 mm
Height0.85 mm
Length2.1 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSC-70-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000219 oz
TARIC8541210000
ImageON Semiconductor MMBTA56WT1G
Pd - Power Dissipation150 mW
RoHS Details
Factory Pack Quantity3000
SeriesMMBTA56W
BrandON Semiconductor
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT 500mA 80V PNP
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)