参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 500 mA
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 4 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 0.25 V
DC Collector/Base Gain hfe Min100
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541210000
Unit Weight0.000282 oz
SeriesMMBTA56L
Pd - Power Dissipation300 mW
BrandON Semiconductor
ImageON Semiconductor SMMBTA56LT1G
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
USHTS8541210095
DescriptionBipolar Transistors - BJT SS DR XSTR SPCL TR
Moisture Sensitivity Level1 (Unlimited)