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IRF640NLPBF
厂牌：INFINEON
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045769766
描述：MOSFET N-CH 200V 18A TO-262
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min6.8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current18 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Width4.5 mm
Height9.45 mm
Rds On - Drain-Source Resistance150 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
MXHTS85412999
Length10.2 mm
KRHTS8541299000
Qg - Gate Charge44.7 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-262-3
Mounting StyleThrough Hole
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
TARIC8541290000
PackagingTube
RoHS Details
ImageInfineon Technologies IRF640NLPBF
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time5.5 ns
BrandInfineon Technologies
Factory Pack Quantity1000
Unit Weight0.084199 oz
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET MOSFT 200V 18A 150mOhm 44.7nC
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation150 W
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time19 ns