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IRF640NSTRLPBF
厂牌：英飞凌(INFINEON)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045769779
描述：Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min6.8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current18 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance150 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge44.7 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time5.5 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageInfineon Technologies IRF640NSTRLPBF
TARIC8541290000
RoHS Details
Unit Weight0.070548 oz
Factory Pack Quantity800
Product TypeMOSFET
Pd - Power Dissipation150 W
BrandInfineon Technologies
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET MOSFT 200V 18A 150mOhm 44.7nC
Vds - Drain-Source Breakdown Voltage200 V
USHTS8541290095
Number of Channels1 Channel
Rise Time19 ns
Moisture Sensitivity Level1 (Unlimited)