参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current46 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 16 V, + 16 V
Typical Turn-On Delay Time9 ns
Width6.22 mm
Rds On - Drain-Source Resistance24 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Length6.5 mm
Height2.3 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge33.3 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
BrandInfineon / IR
ManufacturerInfineon
TARIC8541290000
Factory Pack Quantity2000
Product CategoryMOSFET
Channel ModeEnhancement
RoHS Details
Product TypeMOSFET
Fall Time54 ns
DescriptionMOSFET 30V 1 N-CH HEXFET 19mOhms 33.3nC
ImageInfineon / IR IRLR3103TRPBF
Unit Weight0.139332 oz
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation69 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time210 ns
TypeHEXFET Power MOSFET
Moisture Sensitivity Level1 (Unlimited)