参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 0.1 A
Collector- Emitter Voltage VCEO Max- 45 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.65 V
DC Collector/Base Gain hfe Min125
KRHTS8541409029
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541100901
Minimum Operating Temperature- 65 C
CAHTS8541100090
CNHTS8541409000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541100000
Unit Weight0.000212 oz
RoHS Details
SeriesBC857
Pd - Power Dissipation150 mW
BrandComchip Technology
ImageComchip Technology BC857AW-G
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerComchip Technology
Product CategoryBipolar Transistors - BJT
USHTS8541406050
DescriptionBipolar Transistors - BJT -50V, .1A
Moisture Sensitivity Level1 (Unlimited)