参数项参数值
参数项参数值
DC Current Gain hFE Max20 at 100 uA, 1 V
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max40 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Length1.2 mm
Width0.8 mm
Height0.5 mm
DC Collector/Base Gain hfe Min20
Minimum Operating Temperature- 55 C
Package / CaseSOT-723-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity8000
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageON Semiconductor MMBT4401M3T5G
BrandON Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
DescriptionBipolar Transistors - BJT SOT-723 GP NPN TRANS
SeriesMMBT4401M3
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
SubcategoryTransistors
Pd - Power Dissipation640 mW
Moisture Sensitivity Level1 (Unlimited)