参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 2.4 V
TechnologySi
Id - Continuous Drain Current13 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance205 mOhms
Transistor Type1 P-Channel
MXHTS85412999
Width6.22 mm
Height2.3 mm
Length6.5 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge58 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRFR5410TRLPBF
Product CategoryMOSFET
Unit Weight0.139332 oz
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation66 W
USHTS8541290095
DescriptionMOSFET MOSFT PCh -100V 13A 205mOhm 38.7nC
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)