参数项参数值
参数项参数值
Collector- Emitter Voltage VCEO Max600 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
MXHTS85412101
Height4.6 mm
Length10.4 mm
KRHTS8541299000
Package / CaseD2PAK-3
CNHTS8541210000
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
ImageSTMicroelectronics STGB10NC60KDT4
RoHS Details
SeriesSTGB10NC60KDT4
ManufacturerSTMicroelectronics
Factory Pack Quantity1000
Unit Weight0.079014 oz
BrandSTMicroelectronics
Product TypeIGBT Transistors
Product CategoryIGBT Transistors
DescriptionIGBT Transistors N-channel MOSFET
SubcategoryIGBTs
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)