参数项参数值
参数项参数值
Gate-Emitter Leakage Current150 uA
Collector- Emitter Voltage VCEO Max600 V
Continuous Collector Current14 A
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage2 V
MXHTS85412101
Width4.6 mm
Height9.15 mm
Length10.4 mm
KRHTS8541299000
CNHTS8541210000
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
TARIC8541210000
RoHS Details
ImageSTMicroelectronics STGP14NC60KD
SeriesSTGP14NC60KD
BrandSTMicroelectronics
Unit Weight0.211644 oz
Factory Pack Quantity1000
Product TypeIGBT Transistors
ManufacturerSTMicroelectronics
Continuous Collector Current at 25 C11 A
Product CategoryIGBT Transistors
SubcategoryIGBTs
Pd - Power Dissipation28 W
DescriptionIGBT Transistors PowerMESH" IGBT
USHTS8541290095