参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Collector- Emitter Voltage VCEO Max1200 V
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage2.3 V
MXHTS85412101
KRHTS8541299000
CNHTS8541210000
Package / CaseD2PAK
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
RoHS Details
ImageSTMicroelectronics STGB3NC120HDT4
BrandSTMicroelectronics
Unit Weight0.070548 oz
Product TypeIGBT Transistors
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
Continuous Collector Current at 25 C14 A
Product CategoryIGBT Transistors
SubcategoryIGBTs
Pd - Power Dissipation75 W
USHTS8541290095