参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min42 S
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current40 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 30 V, + 30 V
Minimum Operating Temperature- 65 C
Length38.2 mm
Height9.1 mm
JPHTS8541290100
CAHTS8541290000
Typical Turn-On Delay Time49 ns
Rds On - Drain-Source Resistance130 mOhms
Transistor Type1 N-Channel
Maximum Operating Temperature+ 150 C
ImageSTMicroelectronics STE40NC60
Package / CaseISOTOP-4
PackagingTube
SubcategoryMOSFETs
BrandSTMicroelectronics
Width25.5 mm
TARIC8541210000
Mounting StyleSMD/SMT
Product CategoryMOSFET
ManufacturerSTMicroelectronics
DescriptionMOSFET N-Ch 600 Volt 40 Amp
Factory Pack Quantity100
Qg - Gate Charge430 nC
MXHTS85412101
RoHS Details
SeriesSTE40NC60
Product TypeMOSFET
USHTS8541290075
Channel ModeEnhancement
Fall Time26 ns
Unit Weight1 oz
CNHTS8541210000
Pd - Power Dissipation460 W
TradenamePowerMESH
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time42 ns
TypeMOSFET