参数项参数值
参数项参数值
Forward Transconductance - Min1 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.1 V
TechnologySi
Id - Continuous Drain Current400 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5.5 ns
Width0.6 mm
Rds On - Drain-Source Resistance1.05 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time38 ns
Height0.38 mm
Length1 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge600 pC
Mounting StyleSMD/SMT
Package / CaseCST3-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity10000
CNHTS8541210000
BrandToshiba
ManufacturerToshiba
SeriesSSM3K36
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET Small-signal Nch MOSFET
ImageToshiba SSM3K72KCT,L3F
Fall Time17 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.000026 oz
USHTS8541290095
Pd - Power Dissipation500 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time3.6 ns
Moisture Sensitivity Level1 (Unlimited)