DMP2100UFU-7

厂牌：Diodes Incorporated

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045929655

描述：MOSFET DUAL P-CH -20V -5.7A 0.9W; Tr; MOSFET DUAL P-CH -20V -5.7A 0.9W; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.7A; On Resistance Rds(on):0.025ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V

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商品参数

参数项参数值

ConfigurationDual

Vgs th - Gate-Source Threshold Voltage1.4 V

TechnologySi

Id - Continuous Drain Current5.7 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 10 V, + 10 V

KRHTS8541299000

Typical Turn-On Delay Time70 ns, 70 ns

ManufacturerDiodes Incorporated

Minimum Operating Temperature- 55 C

JPHTS8541290100

RoHS Details

CAHTS8541290000

Rds On - Drain-Source Resistance25 mOhms, 25 mOhms

Transistor Type2 P-Channel

Typical Turn-Off Delay Time626 ns, 626 ns

Package / CaseU-DFN2030-6

Factory Pack Quantity3000

BrandDiodes Incorporated

TARIC8541290000

Maximum Operating Temperature+ 150 C

Mounting StyleSMD/SMT

PackagingCut Tape

PackagingReel

PackagingMouseReel

ImageDiodes Incorporated DMP2100UFU-7

SubcategoryMOSFETs

Qg - Gate Charge21.4 nC

Product CategoryMOSFET

DescriptionMOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W

Product TypeMOSFET

MXHTS85412999

SeriesDMP2100

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.000423 oz

Fall Time396 ns, 396 ns

CNHTS8541290000

Pd - Power Dissipation1.9 W

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels2 Channel

Rise Time144 ns, 144 ns