参数项参数值
参数项参数值
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max65 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V
MXHTS85412101
KRHTS8541219000
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541210000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
BrandON Semiconductor
ManufacturerON Semiconductor
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Unit Weight0.000283 oz
USHTS8541210095
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT SS GP XSTR SPCL TR
Pd - Power Dissipation300 mW
Moisture Sensitivity Level1 (Unlimited)