参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max65 V
Continuous Collector Current0.1 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min200
Width1.25 mm
Height0.9 mm
Length2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSC-70-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.000988 oz
RoHS Details
Pd - Power Dissipation380 mW
ImageON Semiconductor BC846BDW1T1G
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
ManufacturerON Semiconductor
SubcategoryTransistors
USHTS8541210075
DescriptionBipolar Transistors - BJT 100mA 80V Dual NPN
Moisture Sensitivity Level1 (Unlimited)