参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time100 ns
Rds On - Drain-Source Resistance46 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time150 ns
Qg - Gate Charge55 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time100 ns
PackagingCut Tape
PackagingReel
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RD3P200SNTL1
Product CategoryMOSFET
Unit Weight0.130443 oz
SubcategoryMOSFETs
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation20 W
USHTS8541290095
DescriptionMOSFET 100V N-CH 20A POWER
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time35 ns
Moisture Sensitivity Level1 (Unlimited)