参数项参数值
参数项参数值
DC Current Gain hFE Max220 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min220
Width0.6 mm
Height0.35 mm
Length1 mm
MXHTS85412101
KRHTS8541219000
Package / CaseDFN-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingMouseReel
PackagingCut Tape
PackagingReel
TARIC8541210000
Unit Weight0.084658 oz
RoHS Details
SeriesBC857B
Pd - Power Dissipation250 mW
BrandDiodes Incorporated
ImageDiodes Incorporated BC857BLP4-7
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
USHTS8541210095
DescriptionBipolar Transistors - BJT 250mW -45V
Moisture Sensitivity Level1 (Unlimited)