参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
MXHTS85412999
Collector-Emitter Saturation Voltage- 650 mV
DC Collector/Base Gain hfe Min220 at -2 mA, - 5 V
KRHTS8541299000
Package / CaseDFN1006-3
CNHTS8541210000
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageDiodes Incorporated BC857BLP-7B
TARIC8541290000
RoHS Details
Factory Pack Quantity10000
ManufacturerDiodes Incorporated
SeriesBC857B
Unit Weight0.317466 oz
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation250 mW
SubcategoryTransistors
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)