参数项参数值
参数项参数值
Gain16 dB
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V to 7 V
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage20 V
Width9.52 mm
Height6.6 mm
Operating Frequency175 MHz
Length24.76 mm
Package / CaseDA
Mounting StyleSMD/SMT
Output Power40 W
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541100000
Unit Weight0.381488 oz
TARIC8541290000
ImageSemelab / TT Electronics D1002UK
Pd - Power Dissipation87 W
Factory Pack Quantity25
BrandSemelab / TT Electronics
ManufacturerTT Electronics
Vds - Drain-Source Breakdown Voltage70 V
Product TypeRF MOSFET Transistors
Product CategoryRF MOSFET Transistors
SubcategoryMOSFETs
DescriptionRF MOSFET Transistors Silicon DMOS RF FET 40W-28V-175HMz SE
USHTS8541100080
TypeRF Power MOSFET