参数项参数值
参数项参数值
Gain16 dB
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V to 7 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage20 V
Operating Frequency175 MHz
Package / CaseDM
Mounting StyleSMD/SMT
Output Power80 W
Maximum Operating Temperature+ 150 C
CNHTS8541100000
TARIC8541290000
ImageSemelab / TT Electronics D1005UK
Pd - Power Dissipation146 W
Factory Pack Quantity25
BrandSemelab / TT Electronics
ManufacturerTT Electronics
Vds - Drain-Source Breakdown Voltage70 V
Product TypeRF MOSFET Transistors
Product CategoryRF MOSFET Transistors
SubcategoryMOSFETs
DescriptionRF MOSFET Transistors Silicon DMOS RF FET 80W-28V-175HMz SE
USHTS8541100080
TypeRF Power MOSFET