参数项参数值
参数项参数值
Forward Transconductance - Min11 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current4.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
ManufacturerVishay
KRHTS8541299000
Typical Turn-On Delay Time20 ns
PackagingMouseReel
PackagingCut Tape
PackagingReel
Factory Pack Quantity3000
Minimum Operating Temperature- 55 C
JPHTS8541290100
BrandVishay / Siliconix
Rds On - Drain-Source Resistance59 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time25 ns
Package / CaseSC-70-6
CAHTS8541290000
TARIC8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
RoHS Details
ImageVishay / Siliconix SIA921EDJ-T4-GE3
Qg - Gate Charge23 nC
SubcategoryMOSFETs
DescriptionMOSFET -20V Vds 12V Vgs PowerPAK SC-70
Product TypeMOSFET
MXHTS85412999
Product CategoryMOSFET
SeriesSIA
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.086157 oz
Fall Time10 ns
CNHTS8541290000
Pd - Power Dissipation7.8 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time20 ns
Moisture Sensitivity Level1 (Unlimited)