参数项参数值
参数项参数值
DC Current Gain hFE Max25 at 5 mA, 2 V
Gain Bandwidth Product fT130 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min25 at 5 mA, 2 V, 40 at 150 mA, 2 V, 25 at 500 mA, 2 V
Width3.5 mm
Height1.57 mm
Length6.5 mm
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.003951 oz
Pd - Power Dissipation1500 mW
SeriesBCP56
ImageON Semiconductor SBCP56T1G
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
SubcategoryTransistors
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT SS GP XSTR NPN 80V
Moisture Sensitivity Level1 (Unlimited)