参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 45 V
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
DC Collector/Base Gain hfe Min220 at -2 mA, - 5 V
Width1.35 mm
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 125 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingMouseReel
PackagingCut Tape
Unit Weight0.000212 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation200 mW
ImageDiodes Incorporated BC857BS-7-F
SeriesBC857B
BrandDiodes Incorporated
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerDiodes Incorporated
USHTS8541210075
DescriptionBipolar Transistors - BJT PNP BIPOLAR