参数项参数值
参数项参数值
DC Current Gain hFE Max475
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
MXHTS85412101
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min220
KRHTS8541219000
Package / CaseDFN-1006B-3
CNHTS8541210000
JPHTS8541210101
Mounting StyleSMD/SMT
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
ImageNexperia BC857BMB,315
TARIC8541210000
RoHS Details
Factory Pack Quantity10000
ManufacturerNexperia
Unit Weight0.000021 oz
BrandNexperia
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT -45V PNP 100mA 250mW
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation250 mW
SubcategoryTransistors
Part # Aliases934065889315
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)