参数项参数值
参数项参数值
DC Current Gain hFE Max220 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 100 mA
Collector- Emitter Voltage VCEO Max- 45 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min220 at 2 mA, 5 V
Width0.62 mm
Height0.47 mm
Length1.02 mm
MXHTS85412101
KRHTS8541219000
Package / CaseDFN-1006-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 65 C
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
Unit Weight0.000030 oz
RoHS Details
Pd - Power Dissipation430 mW
Part # Aliases934057147315
BrandNexperia
ImageNexperia BC857BM,315
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity10000
SubcategoryTransistors
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
USHTS8541210075
DescriptionBipolar Transistors - BJT TRANS GP TAPE-7
Moisture Sensitivity Level1 (Unlimited)