参数项参数值
参数项参数值
DC Current Gain hFE Max200 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Width1.35 mm
Height1 mm
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseTSSOP-6
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541210000
Factory Pack Quantity10000
BrandNexperia
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT TRANS DOUBLE TAPE-11
ManufacturerNexperia
TARIC8541210000
ImageNexperia BC857BS,135
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000212 oz
SubcategoryTransistors
Part # Aliases934042510135
Pd - Power Dissipation300 mW
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)