参数项参数值
参数项参数值
DC Current Gain hFE Max160
Gain Bandwidth Product fT30 MHz
Collector- Base Voltage VCBO230 V
Maximum DC Collector Current15 A
Collector- Emitter Voltage VCEO Max230 V
Continuous Collector Current15 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.4 V
DC Collector/Base Gain hfe Min55
Width5.2 mm
Height26 mm
Length20.5 mm
MXHTS85412101
KRHTS8541219000
Package / CaseTO-3P-3
Mounting StyleThrough Hole
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingTray
TARIC8541290000
ImageToshiba 2SC5200-O(Q)
RoHS Details
Unit Weight0.239863 oz
Series2SC
Factory Pack Quantity100
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150000 mW
BrandToshiba
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN 230V 15A
ManufacturerToshiba
USHTS8541210095
Moisture Sensitivity LevelNot Applicable