在线商城 
IRF7832TRPBF
厂牌：Infineon Technologies
包装：Cut Tape (CT) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045948902
描述：MOSFET N-CH 30V 20A 8-SOIC
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min77 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.32 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance3.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
Width3.9 mm
Height1.75 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge34 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time13 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRF7832TRPBF
TARIC8541290000
RoHS Details
Unit Weight0.017870 oz
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation2.5 W
BrandInfineon / IR
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET MOSFT 30V 20A 4mOhm 34nC
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095
Number of Channels1 Channel
Rise Time6.7 ns
Moisture Sensitivity Level1 (Unlimited)