商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max65 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min200
MXHTS85412101
KRHTS8541219000
Package / CaseDFN-1006B-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingReel
PackagingMouseReel
Unit Weight0.000021 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation250 mW
ImageNexperia BC846BMB,315
Part # Aliases934066134315
BrandNexperia
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity10000
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerNexperia
USHTS8541210075
DescriptionBipolar Transistors - BJT 65V NPN 100mA 250mW
Moisture Sensitivity Level1 (Unlimited)
