参数项参数值
参数项参数值
DC Current Gain hFE Max450 at 2 mA, 5 V
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max65 V
Continuous Collector Current0.2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85412999
Collector-Emitter Saturation Voltage220 mV
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V
KRHTS8541299000
Package / CaseX2-DFN1006-3
CNHTS8541290000
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated BC846BLP4-7B
TARIC8541290000
RoHS Details
Factory Pack Quantity10000
SeriesBC846
ManufacturerDiodes Incorporated
Unit Weight0.317466 oz
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 65V NPN Small Sig 80V 65V 100mA
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation1 W
SubcategoryTransistors
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)