参数项参数值
参数项参数值
Forward Transconductance - Min168 S
CNHTS8541290000
ConfigurationSingle
Width5 mm
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 16 V, + 16 V
Typical Turn-On Delay Time16.6 ns
Height1 mm
MXHTS85423999
Length6 mm
Rds On - Drain-Source Resistance1.8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Package / CaseVSON-CLIP-8
KRHTS8541299000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Qg - Gate Charge21 nC
TARIC8542399000
ManufacturerTexas Instruments
Factory Pack Quantity2500
RoHS Details
BrandTexas Instruments
ImageTexas Instruments CSD16401Q5
SubcategoryMOSFETs
SeriesCSD16401Q5
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET N-Ch NexFET Power MOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time12.7 ns
Unit Weight0.010582 oz
Pd - Power Dissipation3.1 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage25 V
Number of Channels1 Channel
Rise Time30 ns
Moisture Sensitivity Level1 (Unlimited)