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DMT6012LSS-13
厂牌：Diodes Incorporated
包装：Cut Tape (CT) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045958517
描述：MOSFET N-CH 60V 10.4A SOIC
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage700 mV
TechnologySi
Id - Continuous Drain Current10.4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
CNHTS8541290000
Typical Turn-On Delay Time4.4 ns
MXHTS85412999
Rds On - Drain-Source Resistance11 mOhms
Typical Turn-Off Delay Time25.5 ns
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseSO-8
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Qg - Gate Charge22.2 nC
BrandDiodes Incorporated
TARIC8541290000
ManufacturerDiodes Incorporated
Factory Pack Quantity2500
ImageDiodes Incorporated DMT6012LSS-13
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET MOSFET BVDSS: 41V 60V SO-8 T&R 2.5K
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time12.5 ns
USHTS8541290095
Unit Weight0.002610 oz
Pd - Power Dissipation13.4 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time6.7 ns
Moisture Sensitivity Level1 (Unlimited)