参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current250 mA
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1 V
Rds On - Drain-Source Resistance2.4 Ohms
Transistor Type1 N-Channel MOSFET
Typical Turn-Off Delay Time18 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
Typical Turn-On Delay Time3.5 ns
KRHTS8541219000
RoHS Details
CNHTS8541210000
DescriptionMOSFET RECOMMENDED ALT 755-RSM002N06T2L
Package / CaseSOT-416FL-3
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
JPHTS8541290100
Fall Time28 ns
BrandROHM Semiconductor
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor RE1L002SNTL
SubcategoryMOSFETs
Unit Weight0.000212 oz
Product CategoryMOSFET
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation150 mW
Part # AliasesRE1L002SN
USHTS8541210095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time5 ns
Moisture Sensitivity Level1 (Unlimited)