参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO- 120 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max- 100 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width1.4 mm
Collector-Emitter Saturation Voltage- 300 mV
Height1.1 mm
Length3 mm
MXHTS85412999
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
TARIC8541210000
RoHS Details
PackagingCut Tape
PackagingReel
PackagingMouseReel
SubcategoryTransistors
ImageDiodes Incorporated FMMT593TA
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SeriesFMMT593
USHTS8541210095
Unit Weight0.000282 oz
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP Medium Power
Pd - Power Dissipation500 mW
Moisture Sensitivity Level1 (Unlimited)