参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min34 S
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
KRHTS8541299000
Transistor PolarityN-Channel
Id - Continuous Drain Current81 A
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Vgs - Gate-Source Voltage- 20 V, + 20 V
ImageInfineon Technologies BSC054N04NSGATMA1
Length5.9 mm
Height1.27 mm
Typical Turn-On Delay Time11 ns
DescriptionMOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
Rds On - Drain-Source Resistance4.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
PackagingCut Tape
PackagingReel
PackagingMouseReel
Package / CaseTDSON-8
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Width5.15 mm
Mounting StyleSMD/SMT
BrandInfineon Technologies
Product TypeMOSFET
RoHS Details
TARIC8541290000
MXHTS85412999
Qg - Gate Charge34 nC
ManufacturerInfineon
SeriesOptiMOS 3
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.003954 oz
Fall Time3.6 ns
CNHTS8541290000
Part # AliasesBSC054N04NS G SP000354808
Pd - Power Dissipation57 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time2.6 ns
Moisture Sensitivity Level1 (Unlimited)